![]() Both electrons and holes play a key role in the conductivity of bipolar junction transistors.The bipolar junction transistors are mainly divided into two types one is PNP transistors and one is NPN transistors.The gate plays the same role in MOSFETs as what base plays in bipolar junction transistors. ![]() While MOSFETs are voltage-controlled devices and come with terminals like a drain, source, and gate.This is a current-controlled device because the small current at one terminal is employed to handle large current at the remaining terminals. ![]() All these terminals are connected to the external electrical circuit. The three terminals like emitter, base, and collector make this entire device.The D13007K is a power transistor that belongs to the NPN transistor family. ![]() Read this entire post till the end as I’ll document the complete Introduction to D13007K covering datasheet, pinout, power ratings, working principle, applications, and physical dimensions. The collector-base voltage is 700V and collector-emitter voltage is 400 while the voltage across the base and emitter terminals is 9V which is the voltage needed to start the transistor action and bias the device. And the power dissipation is 80W which projects it is eligible to release 80W power during the operation of this device. The collector current of this chip is 8A which means it is best for loads under 8A. This is a high voltage high current capability device used in energy-saving lamps. Holes are major carriers in the case of PNP transistors. As this is an NPN transistor so here major charge carriers are electrons. This device is made of silicon material and falls under the category of bipolar junction transistors. The D13007K is an NPN power transistor mainly used for switching and amplification purpose. In this post today, I’ll walk you through the Introduction to D13007K.
0 Comments
Leave a Reply. |